THEORETICAL ANALYSIS OF TEMPERATURE AND DOPING DEPENDENCE OF MATERIAL PARAMETERS IN GaInNAs/GaAs QUANTUM WELLS
نویسنده
چکیده
The effect of doping and temperature on the gain characteristics of GaInNAs/GaAs quantum well lasers emitting at 1.3 μm are investigated. The unusual band structure of dilute nitrides is analyzed using the band-anti-crossing model (BAC), effective mass and simple approximate expressions for carrier density and optical gain. A significant reduction in the transparency carrier density by p-type doping and an increase in gain by n-type doping are observed for GaInNAs/GaAs. Our calculations show that doped III–N–V quantum well active layers appear to allow achieving certain benefits to lasers.
منابع مشابه
Investigation of optical properties and electronic transport mechanisms in n ve p- type Modulation Doped Ga1-xInxNyAs1-y /GaAs Quantum Well Structures
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